Description: Single Diode Configuration: This device is a Silicon-Glass Beam-Lead PIN diode fabricated with MACOM's patented HMIC™ process. This device features one silicon pedestal embedded in a low ...

Built on a GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of ...

Teledyne HiRel Semiconductors has announced the availability of its Gallium Nitride (GaN) high-power RF switch, model ...

MILPITAS, Calif., January 09, 2025--(BUSINESS WIRE)--Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers ...